Zr掺杂对碳化硼晶格结构的影响

采用热压制备方法就掺杂０．５％Ｚｒ（原子分数）对Ｂ４．３Ｃ晶格结构的影响进行了研究。ＸＲＤ分析表明，样品中形成了Ｂ４．３Ｃ，（ＢＮ）４Ｈ以及（ＺｒＢ２）３Ｈ相，掺Ｚｒ的确改变了Ｂ４．３Ｃ的结构，尤其是在Ｃ－Ｂ－Ｃ链中间的Ｂ（３）处出现了明显的定位。Ｚｒ掺杂元素的影响看来是很特别的，因为用Ｎｉ做了相同的掺杂后并没有发现类似的结构改变。

STRUCTURAL CHANGES OF BORON CARBIDE INDUCED BY Zr INTRODUCTION

Zr doped boron carbide (B4.3C) semiconductor was prepared by hot pressing of mixture of boron carbide powder (B4.3C) and Zr nanocrystals (0.5%, atomic fraction), to investigate influence of impurity incorporation on the subtle structure of B4C crystals. XRD analyses indicated that the hot-pressed sample was composed of B4.3C, (BN)4H, and (ZrB2)3H. Zr introduction does have modified the B4.3C structure. Especially, remarkable vacancies were led into on the B(3) sites of the C-B-C chain centre.The effect of Zr incorporation seems to be unique because similar structural change was not observed by the same experimental procedure with Ni doping. XPS studies revealed that the Zr atoms existed in a state with unsaturated bonding. B4.3C with interstitial Zr atoms is speculated.