| PECVD SiN及其在GaAs MESFET中的应用——第1部分:PECVD SiN的制备及其组分和键结构 |
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| 引用本文： | 罗海云. PECVD SiN及其在GaAs MESFET中的应用——第1部分:PECVD SiN的制备及其组分和键结构[J]. 微纳电子技术, 1993, 0(6) |
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| 作者姓名： | 罗海云 |
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| 作者单位： | 电子部第13研究所 石家庄 |
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| 摘 要： | 叙述了PECVD SiN的制备、性能及其在GaAs场效应器件中的应用。第一部分叙述PECVD SiN的一般概念、设备及淀积条件,阐明其键结构以及它们与工艺条件的关系。第二部分叙述PECVD SiN性能及其与工艺条件的关系,着重叙述在GaAs器件中的应用和对器件性能的影响。
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| 关 键 词： | 等离子淀积 氮化硅 GaAs场效应晶体管 |
PECVD SiN and Its Application in GaAs MESFET Part Ⅰ: Fabrication, Composition, and Bond Structure of PECVD SiN |
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| Luo Haiyun. PECVD SiN and Its Application in GaAs MESFET Part Ⅰ: Fabrication, Composition, and Bond Structure of PECVD SiN[J]. Micronanoelectronic Technology, 1993, 0(6) |
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| Authors: | Luo Haiyun |
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| Abstract: | The fabrication of PECVD SiN films, and its properties and applications in GaAs FETs are described. In part Ⅰ, the general conception of PECVD SiN, the equipments for deposition of SiN and the deposition conditions are reported. The bond structure in silicon nitride and the relation between the bond structures and technical conditions are also presented. In part Ⅱ, the properties of PECVD SiN as a function of technical conditions, focussing on the application of PIECVD SiN in GaAs FETs and the effect of PECVD SiN on device performances, are discussed. |
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| Keywords: | PECVD SiN GaAsFET |
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