| 宽禁带半导体关键设备技术及发展 |
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| 引用本文： | 颜秀文,武祥.宽禁带半导体关键设备技术及发展[J].电子工业专用设备,2013(5):4-8. |
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| 作者姓名： | 颜秀文 武祥 |
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| 作者单位： | 中国电子科技集团公司第四十八研究所,湖南长沙410111 |
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| 摘 要： | 宽禁带半导体设备技术是宽禁带半导体器件的支撑和重要基础。简要介绍了宽禁带半导体器件发展面临的设备问题,重点介绍了碳化硅晶体生长炉、碳化硅外延生长炉、碳化硅离子注入机和氮化镓MOCVD四种制约我国宽禁带半导体器件技术发展的关键设备,指出了宽禁带半导体设备技术的未来发展趋势。
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| 关 键 词： | 宽禁带半导体 碳化硅 氮化镓 离子注入机 关键设备 |
A Review on Wide Band-Gap Semiconductor Key-equipment Technologies and Development |
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| YAN Xiuwen,WU Xiang.A Review on Wide Band-Gap Semiconductor Key-equipment Technologies and Development[J].Equipment for Electronic Products Marufacturing,2013(5):4-8. |
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| Authors: | YAN Xiuwen WU Xiang |
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| Affiliation: | (The 48thResearch Institute of CETC,Changsha 410111,China) |
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| Abstract: | Wide band gap semiconductor equipment technologies are supported the developments of Wide band gap devices.The problems are introduced about wide band gap semiconductor equipment technologies in this paper briefly.Key-equipments are focused on the silicon carbide crystal growth furnace,silicon carbide epitaxial growth furnace,silicon carbide ion implanter and gallium nitride MOCVD,which is restricting in wide band gap semiconductor devices technology development in our country.It pointed out the wide band gap semiconductor equipment technologies development trend in the future. |
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| Keywords: | Wide Band-Gap semiconductor Silicon carbide Gallium nitride Ion implanter Keyequipment |
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