Depth profiling of fullerene-containing structures by time-of-flight secondary ion mass spectrometry

A new variant of depth profiling for thin-film fullerene-containing organic structures by the method of time-of-flight (TOF) secondary ion mass spectrometry (SIMS) on a TOF.SIMS-5 setup is described. The dependence of the yield of C₆₀ molecular ions on the energy of sputtering ions has been revealed and studied. At an energy of sputtering Cs⁺ ions below 1 keV, the intensity of C₆₀ molecular ions is sufficiently high to make possible both elemental and molecular depth profiling of multicomponent (multilayer) thin-film structures. Promising applications of TOF-SIMS depth profiling for obtaining more detailed information on the real molecular composition of functional organic materials are shown.