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Ka波段单片压控振荡器的设计
引用本文:李鹏亮,马 伟. Ka波段单片压控振荡器的设计[J]. 现代电子技术, 2014, 0(13): 77-80
作者姓名:李鹏亮  马 伟
作者单位:西安空间无线电技术研究所,陕西西安710100
摘    要:基于0.25μm GaAs pHEMT工艺设计了Ka波段单片压控振荡器,该压控振荡器采用源极正反馈结构,变容管采用源极和漏极接地的pHEMT管。通过优化输出匹配网络和谐振网络以改善输出功率和相位噪声性能,使用蒙特卡洛成品率分析对本设计的成品率进行分析和改进。版图仿真结果显示:芯片输出频率为24.626.3 GHz,输出功率为(10±1)dBm,谐波抑制大于19 dB,芯片尺寸为1.5 mm×1 mm。

关 键 词:Ka波段  砷化镓  微波单片集成电路  压控振荡器  pHEMT

Design of Ka band MMIC VCO
LI Peng-liang,MA Wei. Design of Ka band MMIC VCO[J]. Modern Electronic Technique, 2014, 0(13): 77-80
Authors:LI Peng-liang  MA Wei
Affiliation:( Xi' an Institute of Space Radio Technology, Xi' an 710100, China)
Abstract:A Ka-band MMIC VCO was designed with 0.25 μm GaAs pHEMT process. The source electrode positive feed-back structure is adopted for VCO. The pHEMT whose source electrode and drain electrode are connected to the ground is used for the varactor. The resonance network and the matching network are optimized to improve the output power and the phase noise performance. The yield of the VCO is analyzed and improved by the Monte-Carlo method. The simulation data shows the typical output power of VCO is 10±1 dBm,the output frequency of VCO is 24.6~26.3 GHz,the harmonic suppression is better than 19 dB. The chip size of the MMIC VCO is 1.5 mm×1 mm.
Keywords:Ka-band  GaAs  MMIC  VCO  pHEMT
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