Performance and hot-carrier reliability of 100 nm channel lengthjet vapor deposited Si3N4 MNSFETs |
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| Authors: | Mahapatra S Rao VR Cheng B Khare M Parikh CD Woo JCS Vasi JM |
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| Affiliation: | Dept. of Electr. Eng., Indian Inst. of Technol., Bombay; |
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| Abstract: | Metal-nitride-semiconductor FETs (MNSFETs) having channel lengths down to 100 mm and a novel jet vapor deposited (JVD) Si3N4 gate dielectric have been fabricated and characterized. When compared with MOSFETs having a thermal SiO2 gate insulator, the MNSFETs show a comparable drain current drive, transconductance, subthreshold slope and pre-stress interface quality. A novel charge pumping technique is employed to characterize the hot-carrier induced interface-trap generation in MNSFETs and MOSFETs. Under identical substrate current during stress, MNSFETs show less interface-state generation and drain current degradation, for various channel lengths, stress times and supply voltages, despite the fact that the Si-Si3N4 barrier (2.1 eV) is lower than the Si-SiO2 barrier (3.1 eV). The time and voltage dependence of hot-carrier degradation has been found to be distinctly different for MNSFETs compared to SiO2 MOSFETs |
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