Stress evolution during isochronal annealing of Ni/Si system |
| |
| Authors: | C J Tsai and K H Yu |
| |
| Affiliation: | Institute of Materials Engineering, National Chung-Hsing University, Taichung, Taiwan |
| |
| Abstract: | Nickel films on Si(001) substrates were annealed in vacuum at a ramp rate of 5°C/min. The total force per unit width (F/W) in the film during isochronal annealing was determined using a laser scanning method for substrate curvature measurements. During heat treatment, several abrupt changes of F/W in the film were observed. A clear correlation between the evolution of F/W and the phase formation sequence was found. X-ray diffraction and sheet resistance measurements revealed that these changes of F/W coincide with the formation sequence of Ni2Si, NiSi, and NiSi2. |
| |
| Keywords: | Annealing Stress Nickel silicides |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
