Low threshold planarized vertical-cavity surface-emitting lasers |
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| Authors: | Geels RS Corzine SW Scott JW Young DB Coldren LA |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA; |
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| Abstract: | Vertical-cavity surface-emitting lasers fabricated utilizing a self-aligned process to provide planarized contacts are discussed. A single 80-Å In0.2Ga0.8As strained quantum well was used in the active region. Emission was at 963 nm. Threshold currents under continuous-wave room temperature operation of 1.1 mA, at 4.0-V bias, were measured for numerous 12-μm×12-μm devices. Corresponding threshold current densities were 800 A/cm2 (600 A/cm2 for broad area devices). These are the lowest figures yet reported for this type of device. It was found that grading of the mirror had a marked effect on mirror resistance |
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