Highly Flexible MoS(2) Thin-Film Transistors with Ion Gel Dielectrics |
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Authors: | Jiang Pu Yohei Yomogida Keng-Ku Liu Lain-Jong Li Yoshihiro Iwasa Taishi Takenobu |
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Affiliation: | Department of Applied Physics, Waseda University , Tokyo 169-8555, Japan. |
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Abstract: | Molybdenum disulfide (MoS(2)) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm(2)/(V·s)) and a high on/off current ratio (10(5)). Furthermore, the MoS(2) transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS(2) films make them suitable for use in large-area flexible electronics. |
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