GaInAs/InP waveguide multiple-quantum-well optical modulator with 9 dB on/off ratio |
| |
| Authors: | Wakita K Nojima S Nakashima K Kawaguchi Y |
| |
| Affiliation: | NTT Electrical Communications Laboratories, Atsugi, Japan; |
| |
| Abstract: | Clear excitonic peak wavelength shifts are obtained with an applied electric field and large on/off ratio optical modulation of long-wavelength light propagating along the plane of GaInAs/InP multiple-quantum-well (MQW) structures grown by metalorganic molecular beam epitaxy (MOMBE). These waveguide MQW optical modulators have a modulation on/off ratio of 8:1 (9 dB) at a driving voltage as low as 5 V operating at a wavelength of 1.55 ?m. This measurement is the first step towards faster and higher extinction ratio devices. |
| |
| Keywords: | |
|
