A Bluetooth radio in 0.18-/spl mu/m CMOS |
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| Authors: | van Zeijl P. Eikenbroek J.-W.T. Vervoort P.-P. Setty S. Tangenherg J. Shipton G. Kooistra E. Keekstra I.C. Belot D. Visser K. Bosma E. Blaakmeer S.C. |
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| Affiliation: | Bluetooth Technol. Licensing Dept., Ericsson Eurolab Netherlands, Emmen; |
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| Abstract: | This paper describes the results of an implementation of a Bluetooth radio in a 0.18-/spl mu/m CMOS process. A low-IF image-reject conversion architecture is used for the receiver. The transmitter uses direct IQ-upconversion. The VCO runs at 4.8-5.0 GHz, thus facilitating the generation of 0/spl deg/ and 90/spl deg/ signals for both the receiver and transmitter. By using an inductor-less LNA and the extensive use of mismatch simulations, the smallest silicon area for a Bluetooth radio implementation so far can be reached: 5.5 mm/sup 2/. The transceiver consumes 30 mA in receive mode and 35 mA in transmit mode from a 2.5 to 3.0-V power supply. As the radio operates on the same die as baseband and SW, the crosstalk-on-silicon is an important issue. This crosstalk problem was taken into consideration from the start of the project. Sensitivity was measured at -82 dBm. |
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