Effects of the ZnO buffer layer and Al proportion on AZO film properties |
| |
Authors: | Sui Cheng-hu Liu Bin Xu Tian-ning Yan Bo and Wei Gao-yao |
| |
Affiliation: | Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China;Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China;Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China;Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China;Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China |
| |
Abstract: | To evaluate the influence of the ZnO buffer layer and Al proportion on the properties of ZnO: Al (AZO)/ZnO bi-layer films,
a series of AZO/ZnO films are deposited on the quartz substrates by electron beam evaporation. The X-ray diffraction measurement
shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties
of the films are investigated. The carrier concentration and Hall mobility both increase with the increase of buffer layer
thickness. However, the resistivity reaches the lowest at about 50 nm-thick buffer layer. The lowest resistivity and the maximum
Hall mobility are both obtained at 1 wt% Al concentration. But the optical transmittance of all the films is greater than
80% regardless of the buffer layer thickness with Al concentration lower than 5 wt% in the visible region. |
| |
Keywords: | |
本文献已被 CNKI SpringerLink 等数据库收录! |
| 点击此处可从《光电子快报》浏览原始摘要信息 |
|
点击此处可从《光电子快报》下载全文 |
|