Analysis of 3D NAND technologies and comparison between charge-trap-based and floating-gate-based flash devices |
| |
| Authors: | Liu Shijun Zou Xuecheng |
| |
| Affiliation: | School of Optics and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China |
| |
| Abstract: | NAND flash chips have been innovated from two-dimension (2D) design which is based on planar NAND cells to three-dimension (3D) design which is based on vertical NAND cells. Two types of NAND flash technologies–charge-trap (CT) and floating-gate (FG) are presented in this paper to introduce NAND flash designs in detail. The physical characteristics of CT-based and FG-based 3D NAND flashes are analyzed. Moreover, the advantages and disadvantages of these two technologies in architecture, manufacture, interference and reliability are studied and compared. |
| |
| Keywords: | 3D NAND flash charge trap floating gate |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
