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2D Materials: C3N—A 2D Crystalline,Hole‐Free,Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties (Adv. Mater. 16/2017)
Authors:Siwei Yang  Wei Li  Caichao Ye  Gang Wang  He Tian  Chong Zhu  Peng He  Guqiao Ding  Xiaoming Xie  Yang Liu  Yeshayahu Lifshitz  Shuit‐Tong Lee  Zhenhui Kang  Mianheng Jiang
Affiliation:1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, P. R. China;2. Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai, China;3. Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China;4. School of Physical Science and Technology, Shanghai Tech University, Shanghai, P. R. China;5. Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, P. R. China;6. Department of Materials Science and Engineering, Technion, Israel Institute of Technology, Haifa, Israel
Abstract:
Keywords:2D materials  carbon  ferromagnetic properties  semiconductors
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