Light‐Emitting Field‐Effect Transistors Consisting of Bilayer‐Crystal Organic Semiconductors |
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Authors: | Kentaro Kajiwara Kohei Terasaki Takeshi Yamao Shu Hotta |
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Affiliation: | Department of Macromolecular Science and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo‐ku, Kyoto 606‐8585, Japan |
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Abstract: | A novel device structure for organic light‐emitting field‐effect transistors has been developed. The devices comprise bilayer‐crystal organic semiconductors of a p‐type and an n‐type. The pn‐junction can readily be formed by successively laminating two crystals on top of a gate insulator. This structure enables the efficient injection and transport of electrons and holes, leading to their effective recombination. As a result, bright emissions are attained. The devices are operated by AC gate voltages. Gate‐voltage phase‐resolved drain‐current and emission‐intensity measurements enable us to study the relationship between the emissions and carrier transport. The maximum external quantum efficiency reaches 0.045%. |
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Keywords: | organic light‐emitting field‐effect transistors (OLEFETs) thiophene/phenylene co‐oligomers external quantum efficiency bilayer‐crystal devices AC gate bias |
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