Etude de la segregation d'impuretes telles que Se et Te dans l'antimoniure de gallium |
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| Authors: | A. Nguyen Van Mau M. Avérous G. Bougnot |
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| Affiliation: | Centre d''Etudes d''Electronique des Solides de l''Université des Sciences et Techniques du Languedoc (Associé au C.N.R.S.) Montpellier - France |
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| Abstract: | We have study the segregation coefficient k of selenium in gallium antimonide for slightly and heavily doped single crystals. We show that k is a function only of the growing rate. We compare there results to tellurium ones. We deduce the value of k when v is zero: this value is ko = 0,013. We show also that the variation of the number of free carriers is linear with Nd the number of donors, in n type as well as p type. |
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