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Effect of Oxygen Binding Energy on the Stability of Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistors |
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| Authors: | Woo‐Seok Cheong Jonghyurk Park Jae‐Heon Shin |
| Abstract: | From a practical viewpoint, the topic of electrical stability in oxide thin‐film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium‐gallium‐zinc‐oxide (IGZO)‐TFTs have revealed that an IGZO‐TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X‐ray photoelectron spectroscopy analysis. |
| Keywords: | In‐Ga‐Zn oxide IGZO electrical stability thin‐film transistor XPS oxygen binding energy |