Controlling Interface Intermixing and Properties of SrTiO3‐Based Superlattices |
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| Authors: | Teruyasu Mizoguchi Hiromichi Ohta Hak‐Sung Lee Nobuaki Takahashi Yuichi Ikuhara |
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| Affiliation: | 1. Institute of Industrials Science, The University of Tokyo, 153–8505, Tokyo, Japan, Institute of Engineering Innovation, The University of Tokyo, 113–8656, Tokyo, Japan;2. Graduate School of Engineering, Nagoya University, 464–8603, Nagoya, Japan;3. Institute of Engineering Innovation, The University of Tokyo, 113–8656, Tokyo, Japan;4. Institute of Engineering Innovation, The University of Tokyo, 113–8656, Tokyo, Japan, Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya 456‐8587, Japan, and WPI advanced Institute for Materials Research, Tohoku University, Sendai 980‐8577, Japan. |
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| Abstract: | By combining state‐of‐the‐art microscopy, spectrosccopy, and first‐principles calculations, atomic‐scale intermixing behavior at heterointerfaces in SrTiO3‐based superlattices is investigated. It is found that Nb is confined to a unit‐cell thickness without intermixing, whereas Ba diffuses only to the adjoining Nb‐doped SrTiO3 layer. It is revealed that the intermixing behaviors at the heterointerfaces are determined by not only the migration energy, but also by the vacancy‐formation energy and the Fermi energy of each layer. Based on these results, we find a method to control the atomic‐scale intermixing at the nonpolar heterointerfaces and clearly demonstrate the property improvements obtained by constructing an abrupt heterointerface. |
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| Keywords: | structure‐property relationships thin films electronic structures/processes/mechanisms nanostructures |
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