| 4GHz低噪声GaAs MESFET参数研究 |
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| 引用本文： | 俞土法.4GHz低噪声GaAs MESFET参数研究[J].固体电子学研究与进展,1985(4). |
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| 作者姓名： | 俞土法 |
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| 作者单位： | 南京固体器件研究所 |
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| 摘 要： | 本文论述4GHz低噪声GaAs MESFET在缩短栅长L,减小寄生电阻(R_s+R_g)的同时需减小等效噪声电阻R_n,以获得较理想的增益和噪声性能.本文还叙述了器件主要参数的控制,并指出在亚微米栅长时栅边缘效应对器件噪声系数的影响.
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4GHz Low Noise GaAs MESFET's Paramater Research |
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| Abstract: | This paper discusses 4GHz low noise GaAs MESFETs while shorten the gate length L and reduce the parasitic resistance (Rs + Rg), needs reduce the equivalent noise resistance Rn to obtain rather perfect gain and noise performance.
This papar also relates primary parameter control of devices and point out the effect of the gats edge effects on the noiss figurs of devices at submicrometer-gate-length. |
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