大功率IGBT模块串联动态均压的研究

绝缘栅双极型晶体管IGBT(Insulated Gate Bipolar Transistor)的串联使用是一种较为有效的提高耐压的方法。作为电感储能型脉冲功率系统中的主断路开关,IGBT串联组合会在开关的动作瞬间在各串联模块两端出现动态不均压的现象。工程应用中,各串联IGBT栅极驱动信号的不同步是导致动态不均压的主要原因。文中分别从负载侧被动均压和栅极侧主动均压对驱动信号的同步性补偿作用进行了理论分析和实验验证,结果表明均可以达到很好的动态均压效果。在此基础上提出利用阻容二极管有源均压法实现多个IGBT模块的串联应用,仿真验证了该方法在3个IGBT串联应用中的可行性。对工程实际应用具有一定的参考意义。

Research on Dynamic Voltage Sharing of High-power Series Connected IGBTs

The serial use of the Insulated Gate Bipolar transistor(IGBT) provides a shortcut method to improve withstand voltage capability.The dynamic voltage sharing must be resolved when IGBT as the main circuit-breaker of inductance stored energy pulse power system.In engineering applications,the uneven gate drive signals of the series IGBTs are the most important factor leading to the dynamic voltage sharing at IGBTs switching moment.This paper respectively analyzes and validates the compensation effect of load’s passive voltage sharing and grid’s initiative voltage sharing.The results show that both two methods can achieve a good effect of dynamic voltage sharing.On this basis,the series application of multiple IGBTs modules has been proposed by the means of resistance and capacitance diode.The simulation validates the feasibility of series application of three IGBTs in this way.It will do a great significance on engineering applications.