Manipulating feature sizes in Si-based grating structures by thermal oxidation |
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Authors: | Chen Xin Ji Ran Dai Ning Scholz Roland Steinhart Martin Nielsch Kornelius Gösele Ulrich |
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Affiliation: | National Key Lab of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China. |
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Abstract: | We report a method for manipulating feature sizes in Si-based grating structures by thermal oxidation, which allows the realization of fin width/period ratios not directly accessible by laser interference lithography. Taking advantage of the expansion in volume associated with the thermal oxidation of Si, grating structures with very high fin width/period ratios of the order of 0.96 were obtained, whereas subsequent chemical etching of the oxide yields grating structures with fin width/period ratios as small as ~0.06. |
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