An integrated RF transceiver for DECT application

An integrated circuit (IC) is presented which implements the complete RF front-end solution for a digital enhanced cordless communications (DECT) cordless phone provided that a single-transistor LNA and a power amplifier are included on the application board. Focus has been put in the paper on the image rejection mixer which achieves image rejection mean values of 43 dB and on the fully integrated voltage-controlled oscillators which guarantees -134 dBc phase noise at 6.5-MHz offset over temperature and process variation. The circuit was fabricated in a high-performance low-cost 20-GHz silicon bipolar technology and assembled on a TQFP64 package. It was tested on the complete application board including the LNA and the power amplifier, and it fully complies with the ETSI TBR06 standard requirements. The internal power supply is 2.8 V