| 光电耦合器件g-r噪声模型 |
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| 引用本文： | 包军林,庄奕琪,杜磊,吴勇,马仲发. 光电耦合器件g-r噪声模型[J]. 半导体学报, 2005, 26(6): 1208-1213 |
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| 作者姓名： | 包军林 庄奕琪 杜磊 吴勇 马仲发 |
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| 作者单位： | 西安电子科技大学微电子研究所 西安710071(包军林，庄奕琪，杜磊，吴勇)，西安电子科技大学微电子研究所 西安710071(马仲发) |
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| 基金项目： | 国家自然科学基金 , 国防预研基金 , 国防重点实验室基金 |
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| 摘 要： | 在宽范围偏置条件下，测量了光电耦合器件的g-r（产生-复合）噪声．实验结果表明，随着偏置电流的增加，g-r噪声逐渐向高频移动，其噪声幅值呈现先增加后减小的变化规律．通过测量前级噪声和后级噪声，发现光电耦合器件g-r噪声来源于后级的光敏三极管．基于载流子数涨落机制，建立了一个光电耦合器件g-r噪声的定量分析模型．实验结果和本文模型符合良好．
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| 关 键 词： | 1/f噪声；g-r噪声；光电耦合器件；深能级缺陷 |
| 文章编号： | 0253-4177(2005)06-1208-06 |
| 修稿时间： | 2004-11-07 |
A Model for a g-r Noise in Optoelectronic Coupled Devices |
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| Bao Junlin,Zhuang Yiqi,Du Lei,Wu Yong,Ma Zhongfa. A Model for a g-r Noise in Optoelectronic Coupled Devices[J]. Chinese Journal of Semiconductors, 2005, 26(6): 1208-1213 |
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| Authors: | Bao Junlin Zhuang Yiqi Du Lei Wu Yong Ma Zhongfa |
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| Abstract: | g-r noise (generation-recombination noise) in optoelectronic coupled devices(OCDs) is studied in a wide bias range.Experimental results demonstrate that the magnitude of g-r noise becomes large and then shrinks as the input current increases,while its intrinsic frequency gets large.By measuring the front and back noise of OCDs,it is also discussed that the source of g-r noise in OCDs is a photosensitive transistor.Based on the mechanism of carrier number fluctuations,a g-r noise model in OCDs is developed.The experimental results agree well with the developed model. |
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| Keywords: | 1/f noise g-r noise OCD deep-level defects |
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