电迁移物理模型参数统计特性提取新方法

随着ＶＬＳＩ技术的发展，电迁移已成为集成电路最主要的失效原因之一，其可靠性评估技术也显得愈加重要。要改进该技术，不仅需要确定可靠性物理模型参数，而且要求掌握参数的统计分布特性。基于电迁移物理模型，提出一种提取参数统计分布特性的新方法。与传统方法相比，此方法不仅所需实验样品少、实验次数少，能真正得到反映样品离散性的物理模型参数的统计分布特性，而且也可用于其它失效机理（如栅氧击穿）物理模型中。

A Novel Method for Extracting the Statistic Property of Parameters in Physical Model of Electromigration

With the development of VLSI techniques, the elctromigration is becoming one of the most essential cause for ICs failure. As a result, its reliability assessment technique becomes more important than ever. To improve the technique, both the values of parameters in physical model of electromigration and the statistic distribution property of the parameters are needed. This paper presents a novel method for extracting the statistic property of parameters in physical model of electromigration. Compared with traditional methods, the new method which needs less tests and samples not only can be used to extract real statistic distribution property of parameters in physical model of electromigration, but also is able to be used in other failure mechanisms (such as the gate oxide breakdown) physical models.