F等离子体处理增强型及耗尽型AlGaN/GaN HEMT集成的D触发器

耗尽型和F等离子体处理增强型高电子迁移率晶体管（HEMT）被集成在同一圆片上。增强型/耗尽型 HEMT反向器、与非门以及D触发器等直接耦合场效应晶体管逻辑电路被制作在AlGaN/GaN异质结上。D触发器在GaN体系中首次被实现。在电源电压为2伏的条件下，增强型/耗尽型反向器显示输出逻辑摆幅为1.7伏，逻辑低噪声容限为0.49伏，逻辑高噪声容限为0.83伏。与非门和D触发器的功能正确，证实了GaN基数字电路的发展潜力。

Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment

Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer. Direct-coupled FET logic circuits, such as an E/D HEMT inverter, NAND gate and D flip-flop, were fabricated on an AlGaN/GaN heterostructure. The D flip-flop and NAND gate are demonstrated in a GaN system for the first time. The dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the NAND gate and shrinking the area, integrating with a conventional AlGaN/GaN D-HEMT and demonstrating a NAND gate. E/D-mode D flip-flop was fabricated by integrating the inverters and the NAND gate on the AlGaN/GaN heterostructure. At a supply voltage of 2 V, the E/D inverter shows an output logic swing of 1.7 V, a logic-low noise margin of 0.49 V and a logic-high noise margin of 0.83 V. The NAND gate and D flip-flop showed correct logic function demonstrating promising potential for GaN-based digital ICs.