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基于GaAs HBT工艺的3.8GHz带宽4GS/s 4bit超高速ADC
引用本文:吴旦昱,周磊,郭建楠,刘新宇,金智,陈建武. 基于GaAs HBT工艺的3.8GHz带宽4GS/s 4bit超高速ADC[J]. 半导体学报, 2011, 32(6): 065007-7
作者姓名:吴旦昱  周磊  郭建楠  刘新宇  金智  陈建武
作者单位:中国科学院微电子研究所,中国科学院微电子研究所,中国科学院微电子研究所,中国科学院微电子研究所,中国科学院微电子研究所,中国科学院微电子研究所
基金项目:国家重点基础研究规划项目
摘    要:报道了一种4GS/s 4bit超宽带(UWB)模数转换器(ADC)芯片,采用1.4um发射级宽度、2层金属布线的InGaP/GaAs HBT工艺实现。该芯片采用折叠内插架构来最小化其面积和电路规模。为了消除折叠内插电路中的偶发错误码,该ADC采用了一种新颖的比特同步电路。实测结果表明,其在4GS/s采样率下具有3.8GHz的模拟带宽和2.6GHz的有效精度带宽(ERBW),在2.6GHz输入带宽内ADC的有效位数大于3.4bit,在4GHz输入带宽内有效位大于3bit。在6.001GHz输入并将输入功率提高4dB后,有效位仍然高达3.49bit,表明该ADC可采样的频率范围包含从第一到第三奈奎斯特区(DC~6GHz)。该芯片的DNL和INL在4GS/s下均小于±0.15LSB,总面积为1.45×1.45 mm2,总功耗为1.98W。

关 键 词:模拟数字转换器  分辨率带宽  ADC  GaAs  GHz  HBT  GS  技术

A 4 GS/s 4 bit ADC with 3.8 GHz analog bandwidth in GaAs HBT technology
Wu Danyu,Zhou Lei,Guo Jiannan,Liu Xinyu,Jin Zhi and Chen Jianwu. A 4 GS/s 4 bit ADC with 3.8 GHz analog bandwidth in GaAs HBT technology[J]. Chinese Journal of Semiconductors, 2011, 32(6): 065007-7
Authors:Wu Danyu  Zhou Lei  Guo Jiannan  Liu Xinyu  Jin Zhi  Chen Jianwu
Affiliation:Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy ofSciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy ofSciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy ofSciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy ofSciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy ofSciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy ofSciences, Beijing 100029, China
Abstract:
Keywords:ADC  folding  interpolating  GaAs  ultra-wide-band  synchronization
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