| 双电极半导体光放大器的放大自发辐射谱和增益特性的实验研究 |
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| 引用本文： | 汪寒超,黄黎蓉,石忠卫.双电极半导体光放大器的放大自发辐射谱和增益特性的实验研究[J].半导体学报,2011,32(6):064010-4. |
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| 作者姓名： | 汪寒超 黄黎蓉 石忠卫 |
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| 作者单位： | 华中科技大学武汉光电国家实验室,华中科技大学武汉光电国家实验室,华中科技大学武汉光电国家实验室 |
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| 基金项目： | 国家高技术研究发展计划 |
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| 摘 要： | 设计并制作了双电极多量子阱半导体光放大器（SOA），对其放大的自发辐射(ASE)谱和增益特性进行了测试和分析。结果表明，注入电流密度分布对多电极SOA的ASE谱和增益特性有非常大的影响。通过调节注入电流密度比，ASE谱的半高全宽、峰值波长、峰值功率以及增益特性能够得到很好的调控。
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| 关 键 词： | 半导体光放大器 增益特性 自发辐射谱 电极 电流密度分布 放大的自发辐射 ASE谱 多量子阱 |
Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier |
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| Wang Hanchao,Huang Lirong and Shi Zhongwei.Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier[J].Chinese Journal of Semiconductors,2011,32(6):064010-4. |
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| Authors: | Wang Hanchao Huang Lirong and Shi Zhongwei |
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| Affiliation: | Wuhan National Laboratory for Optoelectronics, College of Opto-Electronics Science & Engineering, Huazhong University of Science & Technology, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, College of Opto-Electronics Science & Engineering, Huazhong University of Science & Technology, Wuhan 430074, China;Wuhan National Laboratory for Optoelectronics, College of Opto-Electronics Science & Engineering, Huazhong University of Science & Technology, Wuhan 430074, China |
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| Abstract: | A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated. The amplified spontaneous emission (ASE) spectrum and gain were measured and analyzed. It is shown that the ASE spectrum and gain characteristic are greatly influenced by the distribution of the injection current density. By changing the injection current density of two electrodes, the full width at half maximum, peak wavelength, peak power of the ASE spectrum and the gain characteristic can be easily controlled. |
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| Keywords: | semiconductor optical amplifier (SOA) current density amplified spontaneous emission (ASE) gain characteristic |
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