| 金属有机化学气相沉积法生长纯闪锌矿结构P型砷化镓纳米线 |
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| 引用本文： | 李然,黄辉,任晓敏,郭经纬,刘小龙,黄永清,蔡世伟.金属有机化学气相沉积法生长纯闪锌矿结构P型砷化镓纳米线[J].半导体学报,2011,32(5):053003-6. |
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| 作者姓名： | 李然 黄辉 任晓敏 郭经纬 刘小龙 黄永清 蔡世伟 |
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| 作者单位： | 北京邮电大学信息光子学与光通信研究院 |
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| 基金项目： | 国家重点基础研究发展计划（973计划）项目（No:2010CB327600） |
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| 摘 要： | 垂直纯闪锌矿结构P型砷化镓纳米线通过金催化金属有机化学气相沉积法在砷化镓（111）衬底上生长。一系列P型掺杂样本是在生长过程中通入不同流量的二乙基锌实现的。在高II/III族比下（II/III族比>9.1%），P型砷化镓纳米线存在一个弯曲临界长度，超过这个长度纳米线发生弯曲。弯曲的两个可能原因被讨论。运用能量散射X射线方法验证Zn元素已经掺入纳米线，并且对应II/III=0.2%，掺杂浓度约为8*10(18)。
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| 关 键 词： | 金属有机物化学气相沉积 闪锌矿结构 GaAs p型掺杂 纳米线 有机金属 生长 金催化剂 |
Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition |
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| Li Ran,Huang Hui,Ren Xiaomin,Guo Jingwei,Liu Xiaolong,Huang Yongqing and Cai Shiwei.Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition[J].Chinese Journal of Semiconductors,2011,32(5):053003-6. |
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| Authors: | Li Ran Huang Hui Ren Xiaomin Guo Jingwei Liu Xiaolong Huang Yongqing and Cai Shiwei |
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| Affiliation: | Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100088, China;Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts
and Telecommunications, Beijing 100088, China; Electronics Science and Technology Institute, Dalian University of Technology, Dalian 116085, China;Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100088, China;Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100088, China;Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100088, China;Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100088, China;Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100088, China |
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| Abstract: | Vertical p-type gallium arsenide (GaAs) nanowires with pure zinc blende structure were grown on GaAs (111) B substrate by metal-organic chemical vapor deposition via a Au-catalyst vapor-liquid-solid mechanism. The p-type doping was investigated by additional diethyl zinc (DEZn). In the high II/III ratio range (II/III>9.1%), there exists a critical length beyond which kinking takes place. Two possible reasons are discussed. Zn occurrence in the nanowires was verified by energy dispersive X-ray (EDX) analysis. Corresponding to II/III = 0.2%, the doping concentration is about 8 × 1018 cm-3. |
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| Keywords: | GaAs nanowire p-type doping metal organic chemical vapor position zinc-blende structure |
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