| 4H-SiC结型势垒肖特基二极管的制作与特性研究 |
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| 引用本文： | 陈丰平,张玉明,吕红亮,张义门,郭辉,郭鑫. 4H-SiC结型势垒肖特基二极管的制作与特性研究[J]. 半导体学报, 2011, 32(6): 064003-3 |
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| 作者姓名： | 陈丰平 张玉明 吕红亮 张义门 郭辉 郭鑫 |
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| 作者单位： | 西安电子科技大学 |
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| 基金项目： | project supported by the National Natural Science Foundation of China（No61006060）; the 13115 Innovation Engineering of Shannxi Province,China（No2008ZDKG-30） |
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| 摘 要： | 本文设计制作了两种具有不同结构参数的4H-SiC结型势垒肖特基二极管，在制作过程中采用了两种制作方法：一种是对正电极上的P型欧姆接触进行单独制作，然后制作肖特基接触的工艺过程；另一种是通用的通过一次肖特基接触制作就完成正电极制作的工艺过程。器件制作完成后，通过测试结果比较了采用场限环作为边界终端与未采用边界终端的器件的反向特性，结果显示采用场限环有效地提高了该器件的击穿电压，减小了其反向电流。另外，测试结果还显示采用独立制作P型欧姆接触的工艺过程有效提高了4H-SiC结型势垒肖特基二极管的反向特性，其中P型欧姆接触的制作过程和结果也在本文中做出了详细叙述。
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| 关 键 词： | 肖特基二极管 SiC 势垒 制备 特性 欧姆接触 击穿电压 电流密度 |
| 修稿时间： | 2011-02-22 |
Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode |
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| Chen Fengping,Zhang Yuming,Lu Hongliang,Zhang Yimen Guo Hui,Guo Xin. Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode[J]. Chinese Journal of Semiconductors, 2011, 32(6): 064003-3 |
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| Authors: | Chen Fengping Zhang Yuming Lu Hongliang Zhang Yimen Guo Hui Guo Xin |
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| Affiliation: | School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
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| Abstract: | 4H-SiC junction barrier Schottky (JBS) diodes with four kinds of design have been fabricated and characterized using two different processes in which one is fabricated by making the P-type ohmic contact of the anode independently, and the other is processed by depositing a Schottky metal multi-layer on the whole anode. The reverse performances are compared to find the influences of these factors. The results show that JBS diodes with field guard rings have a lower reverse current density and a higher breakdown voltage, and with independent P-type ohmic contact manufacturing, the reverse performance of 4H-SiC JBS diodes can be improved effectively. Furthermore, the P-type ohmic contact is studied in this work. |
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| Keywords: | 4H-SiC junction barrier Schottky field guard ring |
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