| 肖特基栅型共振隧穿晶体管的制作研究 |
| |
| 引用本文： | 胡留长,郭维廉,张世林,梁惠来,宋瑞良.肖特基栅型共振隧穿晶体管的制作研究[J].固体电子学研究与进展,2007,27(1):28-31. |
| |
| 作者姓名： | 胡留长 郭维廉 张世林 梁惠来 宋瑞良 |
| |
| 作者单位： | 天津大学电子信息工程学院,天津,300072 |
| |
| 基金项目： | 专用集成电路国家重点实验室基金 |
| |
| 摘 要： | 已研制成了肖特基栅共振隧穿晶体管,在双势垒结构上蒸发铂金形成栅。通过调制准二维电子积累层的面积进而达到控制隧穿电流的目的。并对发射极正反接电压不同而出现的不同调制现象进行了分析。
|
| 关 键 词： | 共振隧穿晶体管 肖特基栅 负阻 |
| 文章编号： | 1000-3819(2007)01-028-04 |
| 修稿时间： | 2006-02-28 |
Study of the Fabrication of Schottky-gated Resonant Tunneling Transistor |
| |
| HU Liuchang,GUO Weilian,ZHANG Shilin,LIANG Huilai,SONG Ruiliang.Study of the Fabrication of Schottky-gated Resonant Tunneling Transistor[J].Research & Progress of Solid State Electronics,2007,27(1):28-31. |
| |
| Authors: | HU Liuchang GUO Weilian ZHANG Shilin LIANG Huilai SONG Ruiliang |
| |
| Affiliation: | School of Electronic Information Engineering. Tianjin University, Tianjin, 300072. CHN |
| |
| Abstract: | A Schottky gate resonant tunneling transistor(RTT) is fabricated.The gate is formed by electroplating Pt/Au onto the side of an double barrier structure.The gate voltage modulates the tunneling current by modulating the area of the quasi-two-dimensional electron accumulation layer.The different modulation results with different voltage on emitter were analized. |
| |
| Keywords: | resonant tunneling transistor schottky gate negative resistance |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
