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Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver |
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| Authors: | Leheny R.F. Nahory R.E. Pollack M.A. Ballman A.A. Beebe E.D. DeWinter J.C. Martin R.J. |
| Affiliation: | Bell Laboratories, Holmdel, USA; |
| Abstract: | The first operation of an integrated p-i-n-photodiode/f.e.t.-amplifier on a single wafer of In0.53Ga0.47As grown lattice matched to an InP substrate is reported. |
| Keywords: | |