| 光导型InAsSb红外探测器的研制 |
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| 引用本文： | 郭轶,吴广会,冯彦斌.光导型InAsSb红外探测器的研制[J].电子设计工程,2012,20(18):93-95. |
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| 作者姓名： | 郭轶 吴广会 冯彦斌 |
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| 作者单位： | 陕西华星电子集团有限公司,陕西成阳,712099 |
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| 摘 要： | 针对室温（293 K）条件下使用要求,采用InAsSb单晶材料加浸没透镜制作成2～9μm波段高灵敏度光导型InAsSb红外探测器。实测光谱响应值出现在1.656 5～8.989μm。在光谱响应波段范围内,最大响应度值为对比组C2、C3组。初步实现了室温（293 K）使用要求,响应光谱2～9μm波段光导型InAsSb红外探测器设计目的。
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| 关 键 词： | 光导型红外探测器 InAsSb 长波红外材料 熔体外延 |
Fabrication of photoconductors InAsSb infrared detector |
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| GUO Yi,WU Guang-hui,FENG Yan-bin.Fabrication of photoconductors InAsSb infrared detector[J].Electronic Design Engineering,2012,20(18):93-95. |
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| Authors: | GUO Yi WU Guang-hui FENG Yan-bin |
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| Affiliation: | (Shaanxi Huaxing Electron Co.Ltd.,Xianyang 712099,China) |
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| Abstract: | According to room temperature(293 K) conditions use requirement,the InAsSb single crystal material to add submerged made it into 2～9 lens μm band high sensitivity optical type InAsSb infrared detector.The spectral response see figure 1,and the measured spectral response value appear in 1.656 5～8.989 μm.In the spectrum response band range,the measured response degrees value see table 1,the maximum response value of contrast degree of C2 and C3 group.Then realized the room temperature(293 K) use requirement,the response spectrum 2～9 μm band type InAsSb infrared detector optical design purpose. |
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| Keywords: | infrard detector InAsSb long wavelength IR material melt epitaxy |
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