| Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector |
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| 作者姓名： | LIU Shu-ping JIA Yue-hu |
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| 作者单位： | Taiyuan University of Science and Technology, Taiyuan 030024, CHN |
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| 基金项目： | Education Foundation of Shanxi Province（200341） |
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| 摘 要： | According to Maxwell＇s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340 nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500 μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out.
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| 关 键 词： | GeSi/Si 超晶格 纳米晶体 光电探测器 光学性质 |
| 文章编号： | 1007-0206（2006）01-0021-04 |
| 收稿时间： | 2005-08-05 |
| 修稿时间： | 2005-08-25 |
Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector |
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| LIU Shu-ping JIA Yue-hu.Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector[J].Semiconductor Photonics and Technology,2006,12(1):21-24. |
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| Authors: | LIU Shu-ping JIA Yue-hu |
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| Abstract: | According to Maxwell's theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out. |
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| Keywords: | GeSi/Si Superlattice nanocrystalline Photodetector |
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