Oxidation of Hg1−xCdxTe studied with surface sensitive techniques |
| |
| Authors: | P. Morgen J. A. Silberman I. Lindau W. E. Spicer J. A. Wilson |
| |
| Affiliation: | (1) Solid State Electronics Laboratory Department of Electrical Engineering, Stanford University, 94305 Stanford, California;(2) Santa Barbara Research Center, 93017 Goleta, California |
| |
| Abstract: | We report the use of surface sensitive electron spectroscopies to monitor the initial steps of formation of a native oxide on atomically clean cleaved Hgl-xCdxTe single crystal surfaces in ultrahigh vacuum (UHV). Here the oxide is formed by oxygen excited by the presence of an operating ion gauge. During the reaction, the composition of the surface region of the substrate was found to change, with a net loss of Hg from the surface. Parallel studies of the compositions of thick anodic oxides using sputter profiling techniques showed only small amounts of Hg in the anodic oxides. On leave from Odense University, Denmark. |
| |
| Keywords: | Hg1-xCdxTe dry oxidation anodic oxidation |
| 本文献已被 SpringerLink 等数据库收录！ |
