| 平面型RTD及其MOBILE的设计与研制 |
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| 引用本文： | 郭维廉,梁惠来,张世林,胡留长,毛陆虹,宋瑞良,牛萍娟,王伟,商跃辉,王国全,冯震.平面型RTD及其MOBILE的设计与研制[J].半导体学报,2006,27(12):2167-2172. |
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| 作者姓名： | 郭维廉 梁惠来 张世林 胡留长 毛陆虹 宋瑞良 牛萍娟 王伟 商跃辉 王国全 冯震 |
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| 作者单位： | 天津大学电子信息工程学院，天津 300072;天津工业大学信息与通讯工程学院，天津 300160;中国电子科技集团十三所，石家庄 050051;天津大学电子信息工程学院，天津 300072;天津大学电子信息工程学院，天津 300072;天津大学电子信息工程学院，天津 300072;天津大学电子信息工程学院，天津 300072;天津大学电子信息工程学院，天津 300072;天津工业大学信息与通讯工程学院，天津 300160;天津工业大学信息与通讯工程学院，天津 300160;中国电子科技集团十三所，石家庄 050051;中国电子科技集团十三所，石家庄 050051;中国电子科技集团十三所，石家庄 050051 |
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| 基金项目： | 超高速专用集成电路重点实验室基金 |
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| 摘 要： | 鉴于已报道的平面共振遂穿二极管(PRTD)存在的缺点,文中提出了一种新的平面RTD器件结构.以n GaAs代替半绝缘GaAs衬底,利用硼离子注入产生的非晶化作为RTD器件的电隔离,成功设计研制平面型RTD和由其构成的单-双稳转换逻辑单元,此种结构可适用于以输出端作为公用端的所有电路.
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| 关 键 词： | RTD 平面型RTD 离子注入 MOBILE 平面型 MOBILE 设计研制 Planar Fabrication 电路 输出端 器件结构 逻辑单元 转换 双稳 构成 电隔离 非晶化 硼离子注入 利用 半绝缘 GaAs 存在 二极管 |
| 文章编号： | 0253-4177(2006)11-2167-06 |
| 收稿时间： | 4/19/2006 7:05:18 PM |
| 修稿时间： | 05 23 2006 12:00AM |
Design and Fabrication of a Planar RTD and Its MOBILE |
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| Guo Weilian,Liang Huilai,Zhang Shilin,Hu Liuchang,Mao Luhong,Song Ruiliang,Niu Pingjuan,Wang Wei,Shang Yuehui,Wang Guoquan and Feng Zhen.Design and Fabrication of a Planar RTD and Its MOBILE[J].Chinese Journal of Semiconductors,2006,27(12):2167-2172. |
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| Authors: | Guo Weilian Liang Huilai Zhang Shilin Hu Liuchang Mao Luhong Song Ruiliang Niu Pingjuan Wang Wei Shang Yuehui Wang Guoquan and Feng Zhen |
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| Affiliation: | School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,China;The 13th Research Institute,China Electronics Technology Group Cor;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,China;School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,China;The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China;The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China;The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China |
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| Abstract: | A novel device structure for planar resonant tunneling diode (PRTD) is proposed.Semi-insulated (SI) GaAs is replaced with n~+ GaAs as substrate,and amorphous GaAs obtained by Boron ion implantation is employed as the electrical insulator in the devices.The PRTD and Monostable-Bistable transition logic element (MOBILE) formed by the PRTD are designed and fabricated successfully.This device structure can be widely used in all circuits whose common terminals are made by output terminals. |
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| Keywords: | RTD planar RTD ions implantation MOBILE |
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