Ni implantation-induced enhancement of the crystallisation of amorphous Si |
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| Authors: | Young-Woo Ok Tae-Yeon Seong Chel-Jong Choi K N Tu |
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| Affiliation: | (1) Department of Materials Science and Engineering, Korea University, Seoul, 136-713, Korea;(2) Future Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon, 305-350, Korea;(3) Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095-1595, USA |
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| Abstract: | We report on the effect of Ni implantation on the crystallisation process of amorphous Si formed by ion implantation during excimer laser annealing. Scanning transmission electron microscopy and X-ray photoemission spectroscopy results show that NiSi2 precipitates are formed in the Si–Ni-implanted samples. It is shown that the Ni implantation results in the enhanced crystallisation of amorphous Si during laser annealing. The Si–Ni-implanted samples become epitaxial to the Si substrate at 600 mJ/cm2, while the Si-implanted samples produce epitaxial relationship at 800 mJ/cm2. Possible mechanisms by which implanted Ni atoms play a role are given to describe the enhanced crystallisation process of amorphous Si. |
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