Optimization of buffer layers for lattice-mismatched epitaxy of GaxIn1−xAs/InAsyP1−y double-heterostructures on InP

We optimize InAs_yP_1−y buffer layers and compositional grades for lattice-mismatched heteroepitaxy of Ga_xIn_1−xAs/InAs_yP_1−y double-heterostructures on InP. The strains of the active and buffer layers depend on the bulk misfit difference between these layers. The misfit difference is adjusted to eliminate strain in the active layer, thus avoiding misfit dislocations and surface topography that would otherwise form to relieve strain. The optimized structure uses an “overshoot” with respect to the conventional design in the misfit and As composition of the InAs_yP_1−y buffer. Nearly optimized heterostructures typically show excellent structural quality and extended minority-carrier lifetimes.