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Photoluminescence studies of CdTe films and junctions |
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| Authors: | S Vatavu V Padma DL Morel Iu Caraman |
| Affiliation: | a Center for Clean Energy and Vehicles, Department of Electrical Engineering, University of South Florida, Tampa, FL 33620, United States b Semiconductor Physics Lab, Moldova State University, 60 A. Mateevici str., MD 2009, Chisinau, Republic of Moldova c Engineering Department, University of Bacau, 157 Calea Marasesti, 600115 Bacau, Romania |
| Abstract: | Device quality CdTe films and junctions have been studied using low-temperature photoluminescence (PL) measurements. The behavior of the PL was studied as a function of the measurement temperature and excitation intensity. The CdTe films and junctions were prepared under various deposition conditions to determine the effect of film deposition and solar cell fabrication parameters, such as the effect of oxygen, and chloride treatment. A PL band located at 1.232 eV has been attributed to the presence of oxygen. This band is present only in as-deposited samples excited at the CdTe surface. Samples annealed in the presence of CdCl2 exhibit a single PL band located at 1.42 eV. A model explaining the behavior of these bands is presented. |
| Keywords: | Photoluminescence (PL) CdTe Heterojunction |
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