Phase-change optical recording: Past, present, future |
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Authors: | AV Kolobov P Fons |
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Affiliation: | a Center for Applied Near-Field Optics Research, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan b Laboratoire de physicochimie de la matière condensée, CNRS UMR 5617, Université Montpellier II, Place E: Bataillon, 34095 Montpellier Cedex 5, France |
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Abstract: | We discuss specific features of Te-based compounds that made them the best materials for the phase-change data storage. It is demonstrated that the phase-change recording is due to a switch of Ge atoms between octahedral and tetrahedral symmetry positions within the Te face-centered cubic lattice. It is this nature of the transition that makes the Te-based media fast and stable. The driving force for this transition is also discussed. The chapter is concluded by introduction of a concept of the super-resolution near-field structure (super-RENS) disc that allows to reduce a bit size well below the diffraction limit and makes 100 GB/disc storage a reality. |
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Keywords: | Phase-change memories Chalcogenides EXAFS XANES |
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