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Physical properties of Bi doped CdTe thin films grown by CSVT and their influence on the CdS/CdTe solar cells PV-properties |
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| Authors: | O Vigil-Galán E Sánchez-Meza J Sastré-Hernández F Cruz-Gandarilla E Saucedo V Bermúdez |
| Affiliation: | a Escuela Superior de Física y Matemáticas-I.P.N., Edificio de Física Avanzada, av. IPN y Juan de Dios Batiz s/n) U.P.A.L.M. 07738 México D.F., México b Departamento de Física de Materiales, Universidad Autónoma de Madrid, Madrid 28049, Spain c CINVESTAV-IPN, Electrical Engineering Department, Av. IPN N°2508, C. P. 07360, México, D. F., México |
| Abstract: | The physical properties of Bi doped CdTe films, grown on glass substrates by the Closed Space Transport Vapour (CSVT) method, from different Bi doped CdTe powders are presented. The CdTe:Bi films were characterized using Photoluminescence, Hall effect, X-Ray diffraction, SEM and Photoconductivity measurements. Moreover, CdS/CdTe:Bi solar cells were made and their characteristics like short circuit current density (Jsc), open circuit voltage (VOC), fill factor (FF) and efficiency (η) were determined. These devices were fabricated from Bi doped CdTe layers deposited on CdS with the same growth conditions than those used for the single CdTe:Bi layers. A correlation between the CdS/CdTe:Bi solar cell characteristics and the physical properties of the Bi doped CdTe thin films are presented and discussed. |
| Keywords: | CdTe:Bi thin films Physical properties CSVT growth method Solar cells |
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