Layer-by-layer growth of thin epitaxial Fe3Si films on GaAs (001) |
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| Authors: | B Jenichen VM Kaganer W Braun J Herfort R Shayduk KH Ploog |
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| Affiliation: | Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany |
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| Abstract: | Molecular beam epitaxy of Fe3Si films on GaAs (001) is studied in situ by grazing incidence X-ray diffraction. Fe3Si grows layer-by-layer. During deposition the growth front roughens as indicated by the damping of the X-ray oscillations and corresponding atomic force micrographs. The X-ray oscillations are modified during growth at substrate temperatures of 180 °C and below. |
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| Keywords: | 81 15 Hi 61 10 Nz 68 35 Bs 75 50 Cc |
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