Electrochemical etching of copper indium diselenide surface

CuInSe₂ thin films were grown onto ITO surface by electrodeposition and annealed in the hydrogen atmosphere at 400 °C. The influence of traditional chemical etching (KCN etchant) and electrochemical etching at various potentials and values of solution pH (0.8-13) on the surface composition and morphology was studied using the EDX and SEM methods. The mechanism of CuInSe₂ decomposition at various pH values was examined by cycling voltammetry. The influence of chemical and electrochemical etchings on electrical and optical characteristics of thin films was analyzed.