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Strain-mediated phase control and electrolyte-gating of electron-doped manganites |
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| Authors: | Xiang Ping-Hua Asanuma Shutaro Yamada Hiroyuki Inoue Isao H Sato Hiroshi Akoh Hiroshi Sawa Akihito Ueno Kazunori Yuan Hongtao Shimotani Hidekazu Kawasaki Masashi Iwasa Yoshihiro |
| Affiliation: | National Institute of Advanced Industrial, Science and Technology, Tsukuba, Japan. ph.xiang@aist.go.jp |
| Abstract: | A prototype Mott transistor, the electric double layer transistor with a strained CaMnO(3) thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO(3) exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V. |
| Keywords: | correlated electron oxides phase diagram metal–insulator transition field‐effect transistors |
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