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| RTD表观正阻与串联电阻非本征双稳态的相关性 | |
| 引用本文： | 郭维廉,王伟,刘伟,李晓云,牛萍娟,梁惠来,张世林,宋瑞良,毛陆虹.RTD表观正阻与串联电阻非本征双稳态的相关性[J].固体电子学研究与进展,2010,30(1). |
| 作者姓名： | 郭维廉 王伟 刘伟 李晓云 牛萍娟 梁惠来 张世林 宋瑞良 毛陆虹 |
| 作者单位： | 1. 天津工业大学信息与通信工程学院,天津,300160;天津大学电子信息工程学院,天津,300072 2. 天津工业大学信息与通信工程学院,天津,300160 3. 天津大学电子信息工程学院,天津,300072 |
| 基金项目： | 国家自然科学基金资助项目 |
| 摘 要： | 在RTD的I-V特性测量过程中,有时在负阻区出现VP>VV的情况,一般称为表观正阻(APR)现象。通过RTD/RS锁定电路负载线分析,证实APR起源于RTD串联电阻非本征双稳态线。 |
| 关 键 词： | 共振隧穿二极管 电特性 串联电阻效应 表观正阻 双稳态 |
The Correlation between Apparent Positive Resistance in I-V Characteristics of and RTD/RS Latch Extrinsic Bistability on RTD |
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| Weilian,WANG Wei,LIU Wei,LI Xiaoyun,NIU Pingjuan,LIANG Huilai,ZHANG Shilin,SONG Ruiliang,MAO Luhong.The Correlation between Apparent Positive Resistance in I-V Characteristics of and RTD/RS Latch Extrinsic Bistability on RTD[J].Research & Progress of Solid State Electronics,2010,30(1). | |
| Authors: | Weilian WANG Wei LIU Wei LI Xiaoyun NIU Pingjuan LIANG Huilai ZHANG Shilin SONG Ruiliang MAO Luhong |
| Abstract: | During the measurement of I-V characteristics of RTD, V_P>V_V sometimes occurs, in the NDR region commonly. It is called as the apparent positive resistance. In this paper, on the analysis of a RTD/R_S latch circuit load line, it is demonstrated that the APR of RTD originates from the extrinsic bistability loop induced by RTD/R_S latch circuit. |
| Keywords: | RTD electric characterization series resistance effect apparent positive resistance bistability |
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