Digital integrated circuit using GaInAs/InP heterojunction bipolar transistors |
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| Authors: | Topham P.J. Thompson J. Griffith I. Hollis B.A. Hiams N.A. Parton J.G. Goodfellow R.C. |
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| Affiliation: | Plessey Res. Caswell Ltd., Allen Clark Res. Centre, Towcester, UK; |
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| Abstract: | A divider circuit using GaInAs/InP heterojunction bipolar transistors is reported for the first time. This is the first monolithic digital integrated circuit using these devices. The divider has been clocked at 5 GHz, which is the fastest toggle rate for a bipolar circuit on InP.<> |
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