Characterisation and passivation of interface defects in (1 0 0)-Si/SiO2/HfO2/TiN gate stacks |
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| Authors: | P.K. Hurley K. Cherkaoui S. McDonnell G. Hughes A.W. Groenland |
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| Affiliation: | aTyndall National Institute, University College Cork, Cork, Ireland;bDublin City University, Ireland;cMESA+ Institute, University of Twente, The Netherlands |
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| Abstract: | The density and energy distribution of electrically active interface defects in the (1 0 0)Si/SiO2/HfO2 system are presented. Experimental results are analysed for HfO2 thin films deposited by atomic layer deposition and metal-organic chemical vapour deposition on (1 0 0)Si substrates. The paper discusses the origin of the interface states, and their passivation in hydrogen over the temperature range 350–550 °C. |
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