| 缺陷浓度对非晶硅薄膜太阳电池性能的影响 |
| |
| 引用本文： | 吴正军,顾晓峰. 缺陷浓度对非晶硅薄膜太阳电池性能的影响[J]. 电子与封装, 2009, 9(12): 37-40 |
| |
| 作者姓名： | 吴正军 顾晓峰 |
| |
| 作者单位： | 江南大学信息工程学院,江苏无锡,214122;江南大学信息工程学院,江苏无锡,214122 |
| |
| 基金项目： | 教育部留学回国人员科研启动基金，教育部新世纪优秀人才支持计划 |
| |
| 摘 要： | 利用一维微光电子结构分析工具AMPS-1D（Analysis of Microelectronic and Photonic Structures-1D）研究了一种PIN结构的非晶硅基薄膜太阳电池的电流一电压特性。通过系统分析不同缺陷浓度对太阳电池光电特性的影响，探索了在不致严重影响器件性能情况下可容许的最高缺陷浓度。模拟结果表明，若半导体膜足够薄，在带边附近有很高的吸收系数，且具有满足一定条件的迁移率，则可使用含有相当高缺陷浓度（10^16～10^17cm^-3数量级）的非晶硅基薄膜制造出性能良好的太阳电池．
|
| 关 键 词： | 非晶硅 缺陷 太阳电池 PIN 光电特性 |
Effects of Defect Concentration on Properties of Amorphous Silicon Thin Film Solar Cells |
| |
| WU Zheng-jun,GU Xiao-feng. Effects of Defect Concentration on Properties of Amorphous Silicon Thin Film Solar Cells[J]. Electronics & Packaging, 2009, 9(12): 37-40 |
| |
| Authors: | WU Zheng-jun GU Xiao-feng |
| |
| Affiliation: | WU Zheng-jun,GU Xiao-feng (School of Information Technology,Jiangnan University,Wuxi 214122,China) |
| |
| Abstract: | The J-V characteristics of amorphous silicon-based thin film solar cells with typical PIN structure was analyzed using the one-dimensional TCAD software AMPS-1D(Analysis of Microelectronic and Photonic Structures-1D). Effects of different defect concentrations on the photoelectrical characteristics were system-atically investigated to find the allowable highest defect concentration without deteriorating the performance of solar cells. The simulation results indicate that solar cells with good performance ca... |
| |
| Keywords: | PIN |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
