Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature |
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Authors: | A. V. Boĭtsov N. A. Bert Yu. G. Musikhin V. V. Chaldyshev M. A. Yagovkina V. V. Preobrazhenskiĭ M. A. Putyato B. R. Semyagin |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(2) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia |
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Abstract: | Transmitting electron microscopy and X-ray diffractometry are used to study the GaAs layers undoped or doped uniformly with phosphorus (2.3 mol %) and grown at a temperature of 250°C and then annealed isochronously at 400, 500, 600, or 700°C. It is ascertained that doping with phosphorus reduces the amount of excess arsenic captured in the layer in the course of growth and also brings about a retardation of precipitation during subsequent annealing. The concentration of excess arsenic in undoped samples amounted to ~0.2 at %; clusters were observed after annealing at a temperature of 500°C. The concentration of excess arsenic amounted to 0.1 at % in the samples containing phosphorus; in this case, the clusters were observed only after a heat treatment at 600°C. The average size of clusters in doped samples is smaller than that in undoped samples at the same heat-treatment temperatures. |
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