Electrical characteristics of laser-contacted diodes |
| |
| Authors: | M Wittmer W Lüthy B Studer H Melchior |
| |
| Affiliation: | Brown Boveri Research Center, CH-5405 Baden, Switzerland;Institute for Applied Physics, University of Bern, CH-3012 Bern, Switzerland;Swiss Federal Institute of Technology, CH-8049 Zürich, Switzerland |
| |
| Abstract: | We have fabricated p+-n and Schottky diodes with contacts made of laser-formed palladium-silicide. The electrical characteristics of these diodes are presented. The reverse currents and breakdown voltages are comparable to conventionally contacted p+-n diodes. The barrier height of laser-formed Schottky diodes agrees well with published values for Pd2Si. The promising results point out the potential applications of contact formation by laser irradiation in device manufacture. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
