Equivalent input spectrum and drain current spectrum for 1/ƒ noise in short channel MOS transistors |
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Authors: | P. Gentil A. Mounib |
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Affiliation: | Lab. Physique des Composants à Semiconducteur, ERA CNRS 659, 23 Avenue des Martyrs, 38031 Grenobe Cedex, France |
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Abstract: | Flicker noise in MOS transistors can be evaluated by measuring the spectrum SID of the drain current fluctuation or the spectrum Sve of an equivalent gate fluctuation. We show here that experimental variations of are in good agreement with gm2 by considering a model of the transconductance gm which takes into account the variations of the channel carriers mobility with the surface electric field. The model agrees with the experimental results obtained on short channel MOS transistors which exhibit large variations of mobility with the gate voltage. The validity of physical interpretations of noise data on MOS transistors is examined. |
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